Search results
Search for "germanium islands" in Full Text gives 1 result(s) in Beilstein Journal of Nanotechnology.
Si/Ge intermixing during Ge Stranski–Krastanov growth
Beilstein J. Nanotechnol. 2014, 5, 2374–2382, doi:10.3762/bjnano.5.246
- concentration of about 15 atom %. The Ge distribution in the islands follows a cylindrical symmetry and Ge segregation is observed only in the {113} facets of the islands. The Ge composition of the wetting layer is not homogeneous, varying from 5 to 30 atom %. Keywords: atom probe tomography; germanium islands
Other Beilstein-Institut Open Science Activities
